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Product ID : CRS62
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VLSI - Semiconductor Devices (Module 2)
VLSI Module 2 comprises of concepts related to charge carrier transport in semiconductors and how it affects the characteristics of diodes. This module covers the junction physics involved in P-N junction diode with its IV characteristics under various modes of operations. Fourth chapter involves diode characteristics under AC signals. Module -2 concludes with a metal semiconductor junction diode also known as Shotky diode and its characteristics.
 
Unit 1: Charge Carrier Transport
This chapter includes physics of charge carrier transport, continuity equation which describes its physics, Einsteinís equation and concept of drift and diffusion current.
Unit 2: PN Junction
This chapter includes the introduction of P-N junction and band diagram of P-N junction. Parameters describing the behavior of P-N junction like depletion width, charge, electric field and built in potential.
Unit 3: PN Junction and its Characteristics
P-N junction diode and itís IV characteristics involves the behavior of P-N junction under forward and reverse bias. It describes the behavior of P-N junction diode under various regimes of IV characteristics such as Diffusion limited regime, ambipolar regime, High Injection, R-G depletion, Breakdown, Trap assisted recombination and generation.
Unit 4: AC Signal Analysis
This chapter emphasizes on study of P-N junction diode under small and large AC signals. This chapter also includes the concept of digital electronics.
Unit 5: Schottky Diode
Chapter 5 is all about metal Ė semiconductor junction physics with its application on Shotky diode. It involves turn-on and turn-off characteristics of the diode and concept of thermo-ionic current.
Complete Course Rs 1800  Add to Cart 
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